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1. I agree, it is quite complicated to get a good voltage distribution across all MOSFETs during turn-on and turn-off. Furthermore 10 kV is high voltage and one needs to be extremely careful with such voltage levels, which can be deadly. – Ken Grimes.
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a SiC diode were able to obtain a breakdown voltage of about 20 kV, which is almost equivalent to that of a high-pressure Si stack. The breakdown voltage of SiC MOSFETs is about 10 kV, whereas it is 1 kV for the Si MOSFETs. Moreover, the complexity, as well as the size of SiC devices, can be reduced drastically compared to …
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The total module footprint is 35.2 mm × 74.3 mm × 11.4 mm without the housing, giving a power density of 18.1 W/mm 3. For reference, the power density of Wolfspeed s 10 kV, 240 A SiC MOSFET module is 4.2 W/mm 3, including the housing. According to ANSYS Q3D Extractor, the gate-loop inductance for each MOSFET die is 3.8 nH.
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10kV, 10A SiC MOSFET DC bus capacitor bank Inductor (6.9mH) (b) Fig. 4: Photograph of (a) 10kV, 10A 4H-SiC MOSFET die in a package without isolated base plate, and (b) the UIS test hardware setup. IV. EXPERIMENTAL RESULTS Fig. 4(a) shows the photograph of the 10kV SiC MOSFET. Its package does not have isolated base plate,
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The characterization of soft-switching losses of modern high-voltage SiC MOSFETs is a difficult but necessary task in order to provide a sound basis for the accurate modelling of converter systems ...
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In this paper, we report our recently developed 10 kV/20 A SiC MOSFETs with a chip size of 8.1 × 8.1 mm 2 and a specific on-resistance (R ON, SP) of 100 MΩ-cm 2 at 25 °C. We also developed 15 kV/10 A SiC power MOSFETs with a chip size of 8 × 8 mm 2 and a R ON, SP of 204 mQ cm 2 at 25 °C.
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1. Introduction. In high-voltage (HV) and high-power fields, SiC MOSFET is widely used for its excellent performance [1], [2], [3].The drain-source current of SiC MOSFET has the unsaturated characteristic, which is different from traditional Si MOSFET [4].With the increase of drain-source voltage (V ds) of SiC MOSFET, its drain-source …
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@article{osti_1819539, title = {Design Considerations for High-Voltage Insulated Gate Drive Power Supply for 10-kV SiC MOSFET Applied in Medium-Voltage Converter}, author = {Zhang, Li and Ji, Shiqi and Gu, Shida and Huang, Xingxuan and Palmer, James Everette and Giewont, William and Wang, Fei Fred and Tolbert, Leon …
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Gen3 10kV/350mOhm SiC MOSFET: Bare die: $750 each: 10kV/15A SiC JBS diode. $300 each. Quant. Part Number: Description: Package: COST: Data Sheet 2: 100: XPW3-10000-Z015B: 10kV/15A SiC JBS diode: Bare die: $300 each: Pages. Contact Us; Engineering Samples Device Bank; FAQ Sheet; Home; PowerAmerica Device Use Agreements;
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SiC MOSFETs and 15kV 4H-SiC n-IGBTs. The 15kV 4H-SiC MOSFET shows a specific on-resistance of 204mΩcm2 at 25°C, which increased to 570mΩcm2 at 150°C. The 15kV 4H-SiC MOSFET provides low, temperature-independent, switching losses which makes the device more attractive for applications that require higher switching frequencies. The …
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High-density packaging of high-voltage semiconductors, such as 10 kV silicon-carbide (SiC) metal-oxide semiconductor field-effect transistor (MOSFETs), has the added challenge of maintaining low electric field …
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16 16 18 20 8.1 mm • Very Small Difference in On-Resistance (RDS,on) at 150 C • Enhanced Short Circuit 10 kV SiC MOSFET has Higher Threshold Voltage Measured I-V Characteristics at 150 C of Enhanced Short Circuit Capability and Baseline Gen3 10 kV/350 mOhm SiC MOSFETs 16 18 20 Enhanced Short Circuit Gen3
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SiC devices is utilized for high frequency switching, reaches 98.6% at its peak value, proposing that SiC MOSFET's lower switching losses compared with Si IGBT. IV. CONLUSIONS This paper discussed the switching transient and switching loss of the 1200V 100A SiC MOSFET, compared it with the same rating silicon IGBT, the results
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High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and low parasitic inductance. High-density packaging of high voltage semiconductors, such as 10kV SiC MOSFETs, has brought additional challenge. This work proposes a wire-bond-less, highly integrated planar SiC half-bridge module, with …
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SHORT-CIRCUIT TESTING OF 900V, 10mOHM SiC MOSFET IN TO-247-3L 20 • Tested 4us with VGS = 19V • IDS was not captured on scope, but was >406A • At VDS = 500V, peak voltage was 645V, and device survived • At VDS = 600V, peak voltage was 755V, and device failed • Consistent with or above typical commercial SiC …
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Key novel technologies such as enhanced gate-driver, auxiliary power supply network, PCB planar dc-bus, and high-density inductor are presented, enabling the SiC-based designs in modular MV converters, overcoming aforementioned challenges.
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MOSFETs or IGBTs are no longer suitable for 10kV SiC MOSFET, since the higher input voltage makes the auxiliary circuit design more difficult. Consequently, the
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consists of a split DC-link and a 10kV SiC MOSFET-based half-bridge on the MV-side, a 52 : 6 MF transformer providing the galvanic isolation, and a 1200V SiC MOSFET-based full-bridge on the LV-side. The half-bridge configuration is selected 10kV SiC 1.2kV SiC U DC,MV n=52:6 L C r i L h i MV LV S 1 S 2 11 S 12 21 S 22 C 1 C 2 C 3 u MV LV (a) MV ...
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Now, it is feasible to design half-bridge power modules based on 10-kV SiC-MOSFETs for higher current applications. This paves the way for many application areas for these devices, particularly for medium-voltage and high-power applications. This paper presents a design of a modular medium-voltage, high-power isolated DC–DC converter enabled ...
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Fig. 1: Three phase converter enabled by 10kV SiC MOSFETs to be designed to ensure safe operation during switching. The high di/dt introduces voltage surge on the device during
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While 10kV silicon-carbide (SiC) MOSFETs are gradually penetrating into medium-voltage (MV) applications, intertwined challenges concerning high-voltage insulation, high dv=dt, protections, and ...
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A comprehensive comparison with previous device is shown in Table 1. 10 kV / 5 A SiC MOSFET (M1) [12] and 10 kV / 10 A SiC MOSFET (M2) [43] are used as two examples to compare with the device in ...
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Analysis and design consideration are given in detail, followed by the experimental verification using 10-kV/10-A SiC MOSFETs. KW - Battery Energy Storage System (BESS) KW - Gate drivers. KW - Logic gates. KW - MOSFET. KW - SiC MOSFET. KW - Silicon carbide. KW - Snubbers. KW - Switches. KW - Voltage. KW - self-powered gate driver. …
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High-density packaging of high voltage semiconductors, such as 10kV SiC MOSFETs, has brought additional challenge. This work proposes a wire-bond-less, highly integrated planar SiC half-bridge module, with embedded decoupling capacitors and a high performance integrated thermal management system.
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It consists of a split DC-link and a 10 kV SiC MOSFET-based half-bridge on the MV-side, a 52 : 6 MF transformer providing the galvanic isolation, and a 1200 V SiC MOSFET-based fullbridge on the LV ...
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In the current paper, we propose a complete sizing of the power supply and we justify the choice of each component, notably the 10kV SiC MOSFETs and diodes, as presented in Section 3. The experimental setup, performance analysis, notably through a power balance, and results are discussed in Section 3 and Section 4 .
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Full-load measurement (25kW @ 7kV DC) -ZVS over full AC cycle (!) AC-DC Stage: Efficiency. 99.1%efficiency @ 100% load. 98.7%efficiency @ 50% load. Low losses despite 35…75 kHz sw. frequency. 3.3kW/dm3(box volume) 99.1%. 3.3kW/dm3. Loss Distribution.
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SiC MOSFETs capable of blocking extremely high voltages (up to 15kV); while dopant control for thin highly-doped epitaxial layers has helped enable low on-resistance 900V SiC MOSFET production. Device design and processing improvements have resulted in lower MOSFET specific on-resistance for each successive device generation.
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10 kV SiC MOSFETs are promising to substantially boost the performance of future medium voltage (MV) converters, ranging from MV motor drives to fast charging stations for electric vehicles (EVs). Numerous factors influence the switching performance of 10 kV SiC MOSFETs with much faster switching speed than their Si counterparts.
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Hesam Mirzaee,Ankan De, Awneesh Tripathi, Subhashish Bhattacharya," Design comparison of high power medium-voltage converters based on 6.5kV Si-IGBT/Si-PiN diode, 6.5kV Si-IGBT/SiC-JBS diode, and 10kV SiC MOSFET/SiC-JBS diode ",IEEE Energy Conversion Congress and Exposition,2011
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Our Silicon Carbide MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability. We established a new benchmark for energy …
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Characterization, Modeling, and Application of 10-kV SiC MOSFET. Abstract: Ten-kilovolt SiC MOSFETs are currently under development by a number of organizations in the United States, with the aim of enabling their applications in high-voltage high-frequency power conversions.
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