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onsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET is optimized for power applications. Přeskočit na Hlavní obsah +420 517070880. Kontaktovat Mouser (Brno) +420 517070880 | Podněty. Změnit místo. Čeština. English; CZK. Kč CZK € EUR $ USD Česká Republika. Potvrďte vybranou měnu:
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NTH4L014N120M3P/D Silicon Carbide (SiC) MOSFET – EliteSiC, 14mohm, 1200V, M3P, TO-247-4L NTH4L014N120M3P Features • Typ. RDS(on) = 14 m @ VGS = 18 V • Low …
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NTH4L040N120SC1 4 TYPICAL CHARACTERISTICS 16 V Figure 1. On−Region Characteristics Figure 2.Normalized On−Resistance vs. Drain Current and Gate Voltage VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) 0 2 0 80 100 0 20 50 100 0.5 1.0 1.5 Figure 3.
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NTH4L160N120SC1 3 Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Reverse Recovery Energy EREC VGS = −5/20 V, ISD = 16 A, dIS/dt = 1000 A/ s − 3.9 − J
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Silicon Carbide (SiC) MOSFET – EliteSiC, 29 mohm, 1200V, M3S, TO-247-4L, NTH4L030N120M3S Datasheet, NTH4L030N120M3S circuit, NTH4L030N120M3S data sheet : ONSEMI, alldatasheet, Datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs and other semiconductors.
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NTH4L014N120M3P: Download NTH4L014N120M3P Click to view: File Size 329.15 Kbytes: Page 8 Pages : Manufacturer: ONSEMI [ON Semiconductor] Direct Link: …
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به روزرسانی ۲ مرداد ۱۴۰۲: لیست قیمت جدید کارخانه ای محصولات سایپا با احتساب کلیه هزینه های جانبی ویژه مردادماه ۱۴۰۲ منتشر شد. نام محصول. قیمت (ریال) ساینا S تیپ DA. ۲,۴۸۶,۹۴۰,۰۰۰. ساینا S دوگانه. ۲ ...
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Learn More about onsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET View Products related to onsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET. Learn More About EliteSiC onsemi EliteSiC. Addresses the needs of demanding applications like solar inverters, and electric vehicle chargers.
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： ONSEMI - NTH4L014N120M3P - Silicon Carbide MOSFET, Single, N Channel, 127 A, 1.2 kV, 0.014 ohm, TO-247 1+ 453.34149 1+ 54.68524
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NTH4L020N120SC1 4 TYPICAL CHARACTERISTICS 16 V Figure 1. On−Region Characteristics Figure 2.Normalized On−Resistance vs. Drain Current and Gate Voltage VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) 0 2 0 200 250 0 50 250 0.5 1.0 1.5 Figure 3.
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onsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET is optimized for power applications. The onsemi MOSFET features planar technology that works reliably with negative gate voltage drives and turns off spikes on the gate.
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onsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET is optimized for power applications. The onsemi MOSFET features planar technology that works reliably with negative gate voltage drives and turns off spikes on the gate. This family has optimum performance when driven with an 18V gate drive but also works well with a 15V gate drive.
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Order today, ships today. NTH4L014N120M3P – N-Channel 1200 V 127A (Tc) 686W (Tc) Through Hole TO-247-4L from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
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NTH4L014N120M3P onsemi MOSFET SiC MOSFET 1200 V 14 mohm M3P Series in TO247-4LD package datasheet, inventory & pricing.
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قیمت نبشی در تمامی کارخانه ها (اصفهان، مشهد) در سایز های ۳، ۴، ۵، ۱۰ را در سایت آهن ملل مشاهده کرده و با توجه قیمت روز نبشی اقدام به خرید کنید.
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ADAS and Automation Systems enable modern vehicles to become semi-autonomous with increased safety, minimizing fatalities and injuries.. Learn more about our holistic sensing …
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NTH4L014N120M3P onsemi MOSFET SiC MOSFET 1200 V 14 mohm M3P Series in TO247-4LD package datasheet, inventory & pricing.
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UCC21737QDWRQ1. Galvanically Isolated Gate Drivers Automotive 10-A isolated single-channel gate driver for SiC/IGBT, active short-circuit protection. QuickView. Stock: 2,799. 2,799. No Image. NTBG025N065SC1. NTBG025N065SC1. MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, D2PAK-7L Silicon Carbide …
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NTH4L014N120M3P Silicon Carbide (SiC) MOSFET onsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET is optimised for power applications. The onsemi MOSFET features Planar technology that works reliably with negative gate voltage drives and turns off spikes on the gate. This family provides optimum performance when driven with an 18V gate …
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nth4l014n120m3p disti # nth4l014n120m3p onsemi Silicon Carbide (SiC) MOSFET – EliteSiC, 14mohm, 1200V, M3P, TO-247-4L - Rail/Tube (Alt: NTH4L014N120M3P) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: …
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onsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET is optimized for power applications. The onsemi MOSFET features planar technology that works reliably with …
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NTH4L014N120M3P onsemi MOSFET SiC MOSFET 1200 V 14 mohm M3P Series in TO247-4LD package datasheet, inventory & pricing.
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NVHL020N120SC1 3 TYPICAL CHARACTERISTICS 16 V Figure 1. On−Region Characteristics Figure 2.Normalized On−Resistance vs. Drain Current and Gate Voltage VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) 0 2 0 200 250 0 50 150 250 0.5 1.0 1.5 Figure 3.
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Buy NTH4L014N120M3P - Onsemi - Silicon Carbide MOSFET, Single, N Channel, 127 A, 1.2 kV, 0.014 ohm, TO-247. Newark offers fast quotes, same day shipping, fast delivery, …
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به روزرسانی ۲۲ خرداد ۱۴۰۲ : لیست قیمت جدید محصولات ایران خودرو برای اجرا از اول تیرماه ۱۴۰۲ از سوی این شرکت منتشر گردید. لیست درج شده قیمت بهای کارخانه است و به آن مبالغ مالیات، بیمه، شماره ...
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The 1200V EliteSiC MOSFETs provide system benefits and include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, low capacitance, and operate at -55°C to 175°C temperature range. The 1200V SiC …
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Buy NTH4L014N120M3P - Onsemi - Silicon Carbide MOSFET, Single, N Channel, 127 A, 1.2 kV, 0.014 ohm, TO-247. element14 New Zealand offers special pricing, same day dispatch, fast delivery, wide inventory, datasheets & technical support.
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NTH4L014N120M3P Datasheet (HTML) - ON Semiconductor: NTH4L014N120M3P Product details: Features • Typ. RDS(on) = 14 m @ VGS = 18 V • Low Switching Losses (Typ. EON 1308 J at 74 A, 800 V) • 100% Avalanche Tested • These Devices are RoHS Compliant Typical Applications
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onsemi NTH4L014N120M3P Silicon Carbide (SiC) MOSFET is optimised for power applications. The onsemi MOSFET features Planar technology that works reliably with negative gate voltage drives and turns off spikes on the gate. This family provides optimum performance when driven with an 18V gate drive, but also works well with a 15V gate drive.
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SOT-363-6 MOSFET, DFN2020MD-6 MOSFET, Enhancement 50 A SMD/SMT N-Channel 30 V MOSFET, SMD/SMT 1 Channel PowerPAK SO-8 N-Channel 2.2 V MOSFET, 12 A N-Channel 250 V MOSFET, 1.8 A N-Channel MOSFET. Technical Specifications. Product Description.
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onsemi. Manufacturer Product Number. NTH4L020N120SC1. Description. SICFET N-CH 1200V 102A TO247. Manufacturer Standard Lead Time. 38 Weeks. Detailed Description. N-Channel 1200 V 102A (Tc) 510W (Tc) Through Hole TO-247-4L.
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NTH4L014N120M3P onsemi MOSFET SiC MOSFET 1200 V 14 mohm M3P Series in TO247-4LD package datasheet, inventory, & pricing.
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